Woodruff School of Mechanical Engineering

Seminar

Title:

DARPA ICECool Apps and RF Electronics Research at Northrop Grumman NG Next

Speaker:

Dr. Vincent Gambin

Affiliation:

Northrop Grumman

When:

Wednesday, February 22, 2017 at 10:00:00 AM

Where:

MRDC Building, Room 4211

Host:

Courtney Aiken
courtney.aiken@me.gatech.edu
4043854795

Abstract

GaN HPA MMIC technology will benefit significantly from higher power handling capability, reduced die size and lower peak channel temperature, enabling increased power output and efficiency, additional system functionality, and reduced size, weight, power and cost (SWAP-C). High-thermal conductivity diamond substrates and diamond via technology are promising recently proposed solutions which can reduce the temperature drop between the device channel and the system heatsink. However thermal management at the heatsink subsequently becomes the next bottleneck and an increased challenge due to the compact die size and concentrated heat flux. The direct integration of microfluidic impingement jets under each HEMT device can help overcome this significantly increased thermal load. This presentation will discuss diamond and microfluidic integration on the DARPA ICECool Apps program. Dr. Gambin will also present information on a new research initiative at Northrop Grumman called NG Next. NG Next Basic Research pursues use-inspired fundamental research in laboratories organized across several interdisciplinary thrust areas. This presentation will focus on the Semiconductor and Devices and Nanomaterials groups including select research topics.


Biography

Dr. Vincent Gambin received his Ph.D. from Stanford University in Material Science and Engineering. He is currently leading the New Semiconductors and Devices group in NG Next Basic Research studying new materials and devices for next generation electronics. He is also the principal investigator for DARPA’s ICECool Applications program developing high-power GaN MMICs cooled with embedded diamond microfluidics. He has worked at Northrop Grumman for 15 years in the field of high-speed RF electronics developing advanced GaAs, InP and GaN devices.