SUMMARY

Wave scattering theory has been developed for centuries, and recent progress in surface metrology allows topographic measurement in an atomic level. However, difficulty in modeling surface roughness does not facilitate the integration of advancements in scattering theory and topographic measurement. Surface roughness modeling is also important for rapid thermal processing (RTP) in the semiconductor industry. Radiative properties required for radiometric temperature measurement in RTP can be accurately predicted by modeling non-Gaussian and anisotropic silicon surface roughness. The research in this thesis focuses on the improvement of roughness modeling to predict the bidirectional reflectance distribution function (BRDF) and the emittance of anisotropically rough silicon surfaces. Surface topography is measured with an atomic force microscope (AFM) to characterize roughness statistics. Surface roughness is modeled for ray-tracing methods to satisfy the following requirements; 1) to obey the energy conservation and the reciprocity principle, 2) to consider multiple scattering, 3) to consider the change of polarization states, 4) to incorporate topographic measurement, 5) to extend to rough surfaces with thin-film coatings, and 6) to deal with wave effects. For validation, modeling results are compared with measurements using an optical scatterometer and an integrating sphere.