SUBJECT: Ph.D. Proposal Presentation
BY: Rajat Gujrati
TIME: Friday, February 10, 2023, 9:00 a.m.
PLACE: Georgia Tech Europe, 301
TITLE: 2D h-BN based processes for flexible electronics
COMMITTEE: Dr. Luis Barrales Mora, Chair (ME)
Dr. Jean Paul Salvestrini (ECE)
Dr. Shannon Yee (ME)
Dr. Nico F. Declercq (ME)
Dr. Abdallah Ougazzaden (ECE)


Boron Nitride (BN) commonly referred to as white graphene has been studied extensively by physicist for over 40 years. An allotrope of BN having layered structure with atoms at hexagonal lattice sites (hence named 2D h-BN) finds great interest in the engineering community owing to its high band gap and 2D structure. Considering this, growth and properties of h-BN has been widely studied and has been a subject of great research interest. However, h-BN is yet to realize its space in the application world of electronic devices.
The thesis aims at developing the applications of 2D h-BN either as sacrificial layer for lift off and transfer (for flexible devices) or as active layer (for UV applications). The proposed work is divided into 4 main chapters all of which are standalone and dedicated to specific device. In addition to finding application of h-BN each chapter also address the current standing challenge in the respective field of device and aims to solve it.
In this thesis we propose and aim to achieve the following: (a) Use of conformal Nano Pyramids together with h-BN as sacrificial layer for development of high efficiency flexible GaN/InGaN solar cells. (b) A new approach for fabricating micro LEDs through selective area growth of epitaxial layers on h-BN. (c) Integrating of GaN/AlGaN MEMS on silicon is addressed and fabrication of novel design of resonators on copper all through using h-BN. (d) Use of persistence photoconductivity to address the imminent challenge of doping of h-BN.