|SUBJECT:||M.S. Thesis Presentation|
|TIME:||Friday, April 21, 2017, 10:00 a.m.|
|PLACE:||MARC Building, 401|
|TITLE:||Thermal Annealing and Mechanical Characterization Study of Electroplated Copper|
|COMMITTEE:||Dr. Suresh K. Sitaraman, Chair (ME)
Dr. Muhannad S. Bakir (ECE)
Dr. Charles Ume (ME)
With continued push toward 3D integrated systems, through-silicon vias (TSVs) play an important role in interconnecting stacked dies. When the continued reduction in TSV diameter, the grain size and orientation of electroplated copper in TSVs are significantly influenced by the surrounding silicon. When such TSVs are annealed at high temperatures, the microstructure further changes, and the properties of the electroplated copper material also changes.