|SUBJECT:||M.S. Thesis Presentation|
|TIME:||Monday, April 7, 2014, 3:00 p.m.|
|PLACE:||Love Building, 109|
|TITLE:||Addressing Thermal and Environmental Reliability in GaN-based High Electron Mobility Transistors|
|COMMITTEE:||Dr. Samuel Graham, Chair (ME)
Dr. Baratunde A. Cola (ME)
Dr. Shyh-Chiang Shen (ECE)
AlGaN/GaN high electron mobility transistors (HEMTs) have appeared as attractive candidates for high power, high frequency, and high temperature operation at microwave frequencies. In particular, these devices are being considered for use in the area of high RF power for microwave and millimeter wave communications transmitter applications at frequencies greater than 100 GHz and at temperatures greater than about 150 °C. However, there are concerns regarding the reliability of AlGaN/GaN HEMTs.